@article{3ffeebca7b0b4e8dac7cfef2493ee1bd,
title = "Electron-irradiation-induced deep level in n-type GaN",
keywords = "gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor epitaxial layers, electron beam effects, deep levels, deep level transient spectroscopy, electron traps, vacancies (crystal), Hall effect, defect states",
author = "Fang, {Z. Q.} and Hemsky, {J. W.} and Look, {D. C.} and MacK, {M. P.}",
year = "1998",
month = jan,
day = "26",
doi = "10.1063/1.120783",
language = "English",
volume = "72",
pages = "448--449",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "4",
}