Electron irradiation induced trap in n-type GaN

Z. Q. Fang; J. W. Hemsky; D. C. Look; M. P. Mack; R. J. Molnar; G. D. Via

doi:10.1557/proc-482-881

Electron irradiation induced trap in n-type GaN

Z. Q. Fang
, J. W. Hemsky
, D. C. Look
, M. P. Mack
, R. J. Molnar
, G. D. Via

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	881-886
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-881
State	Published - 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-482-881

Cite this

@article{45ebd584a5974dfe8dd62f97467486d6,

title = "Electron irradiation induced trap in n-type GaN",

author = "Fang, \{Z. Q.\} and Hemsky, \{J. W.\} and Look, \{D. C.\} and Mack, \{M. P.\} and Molnar, \{R. J.\} and Via, \{G. D.\}",

year = "1997",

doi = "10.1557/proc-482-881",

language = "English",

volume = "482",

pages = "881--886",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Electron irradiation induced trap in n-type GaN

AU - Fang, Z. Q.

AU - Hemsky, J. W.

AU - Look, D. C.

AU - Mack, M. P.

AU - Molnar, R. J.

AU - Via, G. D.

PY - 1997

Y1 - 1997

UR - https://www.scopus.com/pages/publications/0031361130

UR - https://www.scopus.com/pages/publications/0031361130#tab=citedBy

U2 - 10.1557/proc-482-881

DO - 10.1557/proc-482-881

M3 - Conference article

AN - SCOPUS:0031361130

SN - 0272-9172

VL - 482

SP - 881

EP - 886

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Electron irradiation induced trap in n-type GaN

ASJC Scopus Subject Areas

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