Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy

H. J. Von Bardeleben; M. O. Manasreh; D. C. Look; K. R. Evans; C. E. Stutz

doi:10.1103/PhysRevB.45.3372

Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy

H. J. Von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, C. E. Stutz

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3372-3375
Number of pages	4
Journal	Physical Review B
Volume	45
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.45.3372
State	Published - 1992

ASJC Scopus Subject Areas

Condensed Matter Physics

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10.1103/PhysRevB.45.3372

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title = "Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy",

author = "{Von Bardeleben}, {H. J.} and Manasreh, {M. O.} and Look, {D. C.} and Evans, {K. R.} and Stutz, {C. E.}",

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doi = "10.1103/PhysRevB.45.3372",

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pages = "3372--3375",

journal = "Physical Review B",

issn = "0163-1829",

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AU - Von Bardeleben, H. J.

AU - Manasreh, M. O.

AU - Look, D. C.

AU - Evans, K. R.

AU - Stutz, C. E.

PY - 1992

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EP - 3375

JO - Physical Review B

JF - Physical Review B

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Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy

ASJC Scopus Subject Areas

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