Epitaxial growth at high rates with LEPECVD

C. Rosenblad, T. Graf, J. Stangl, Yan Zhuang, G. Bauer, J. Schulze, H. von Känel

Research output: Contribution to journalArticlepeer-review

Abstract

We discuss a new method for plasma enhanced chemical vapor deposition, called low energy plasma enhanced chemical vapor deposition (LEPECVD), applied to the epitaxial growth of Si and SiGe heterostuctures. Growth rates up to 5 nm/s become possible at substrate temperatures below 600°C, by utilizing very intense but low energy plasmas to decompose the reactive gases, SiH4 and GeH4, and by supplying non-thermal energy to enhance the surface kinetics. We have applied LEPECVD to the synthesis of step-graded SiGe buffer layers, and studied them by scanning force microscopy and X-ray reciprocal space mapping.
Original languageAmerican English
Pages (from-to)89-91
JournalThin Solid Films
Volume336
Issue number1-2
DOIs
StatePublished - Dec 30 1998
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Plasma enhanced chemical vapor deposition
  • SiGe
  • Relaxed buffer

Disciplines

  • Electrical and Computer Engineering

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