Abstract
We discuss a new method for plasma enhanced chemical vapor deposition, called low energy plasma enhanced chemical vapor deposition (LEPECVD), applied to the epitaxial growth of Si and SiGe heterostuctures. Growth rates up to 5 nm/s become possible at substrate temperatures below 600°C, by utilizing very intense but low energy plasmas to decompose the reactive gases, SiH4 and GeH4, and by supplying non-thermal energy to enhance the surface kinetics. We have applied LEPECVD to the synthesis of step-graded SiGe buffer layers, and studied them by scanning force microscopy and X-ray reciprocal space mapping.
Original language | American English |
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Pages (from-to) | 89-91 |
Journal | Thin Solid Films |
Volume | 336 |
Issue number | 1-2 |
DOIs | |
State | Published - Dec 30 1998 |
Externally published | Yes |
Keywords
- Chemical vapor deposition
- Plasma enhanced chemical vapor deposition
- SiGe
- Relaxed buffer
Disciplines
- Electrical and Computer Engineering