ErAs as a Transparent Contact at 1.55 μm

M. P. Hanson; A. C. Gossarw; E. R. Brown

doi:10.1063/1.2354038

ErAs as a Transparent Contact at 1.55 μm

M. P. Hanson, A. C. Gossarw, E. R. Brown

Research output: Contribution to journal › Article › peer-review

Abstract

An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55. The semitransparent window extends from ∼1.5 to 2.3 μm. These films were found to have resistivities less than 7 × 10 5 ∼ cm and permit ∼85% transmission for a 150 nm film and ∼97% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 μ,m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 μm. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region.

Original language	English
Article number	111908
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2354038
State	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Keywords

Optical communications
Semiconductor device fabrication
Epitaxy
Polycrystalline material
Semimetals
Thin films
Optical properties
Oxides
Transition metals
Optics
Optics and photonics

Disciplines

Physics

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10.1063/1.2354038

Cite this

@article{a43761e9c61347138401efaf77929bd4,

title = "ErAs as a Transparent Contact at 1.55 μm",

abstract = "An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55. The semitransparent window extends from ∼1.5 to 2.3 μm. These films were found to have resistivities less than 7 × 10 5 ∼ cm and permit ∼85\% transmission for a 150 nm film and ∼97\% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 μ,m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 μm. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region.",

keywords = "Optical communications, Semiconductor device fabrication, Epitaxy, Polycrystalline material, Semimetals, Thin films, Optical properties, Oxides, Transition metals, Optics, Optics and photonics",

author = "Hanson, \{M. P.\} and Gossarw, \{A. C.\} and Brown, \{E. R.\}",

year = "2006",

doi = "10.1063/1.2354038",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "11",

}

TY - JOUR

T1 - ErAs as a Transparent Contact at 1.55 μm

AU - Hanson, M. P.

AU - Gossarw, A. C.

AU - Brown, E. R.

PY - 2006

Y1 - 2006

N2 - An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55. The semitransparent window extends from ∼1.5 to 2.3 μm. These films were found to have resistivities less than 7 × 10 5 ∼ cm and permit ∼85% transmission for a 150 nm film and ∼97% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 μ,m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 μm. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region.

AB - An investigation of the optical transmission properties of semimetallic ErAs films grown by molecular beam epitaxy reveals a maximum in transmission around 1.55. The semitransparent window extends from ∼1.5 to 2.3 μm. These films were found to have resistivities less than 7 × 10 5 ∼ cm and permit ∼85% transmission for a 150 nm film and ∼97% transmission for a 15 nm film with respect to a GaAs substrate at 1.55 μ,m. These results suggest that ErAs may be a useful material for applications requiring transparent contacts from 1.5 to 2.3 μm. Polycrystalline films of ErAs were grown on sapphire substrates to investigate optical properties of ErAs in the visible region.

KW - Optical communications

KW - Semiconductor device fabrication

KW - Epitaxy

KW - Polycrystalline material

KW - Semimetals

KW - Thin films

KW - Optical properties

KW - Oxides

KW - Transition metals

KW - Optics

KW - Optics and photonics

UR - https://www.scopus.com/pages/publications/33748688247

UR - https://www.scopus.com/inward/citedby.url?scp=33748688247&partnerID=8YFLogxK

U2 - 10.1063/1.2354038

DO - 10.1063/1.2354038

M3 - Article

AN - SCOPUS:33748688247

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111908

ER -

ErAs as a Transparent Contact at 1.55 μm

Abstract

ASJC Scopus Subject Areas

Keywords

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