Errata: Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	339
Number of pages	1
Journal	Journal of Electronic Materials
Volume	20
Issue number	4
DOIs	https://doi.org/10.1007/BF02657901
State	Published - Apr 1991

ASJC Scopus Subject Areas

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title = "Errata: Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process",

author = "Crist, \{J. O.\} and Look, \{D. C.\}",

year = "1991",

month = apr,

doi = "10.1007/BF02657901",

language = "English",

volume = "20",

pages = "339",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "4",

}

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T2 - Activation efficiencies for a standard qualification implant in gaas annealed by a rapid thermal process

AU - Crist, J. O.

AU - Look, D. C.

PY - 1991/4

Y1 - 1991/4

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U2 - 10.1007/BF02657901

DO - 10.1007/BF02657901

M3 - Comment/debate

AN - SCOPUS:51649157182

SN - 0361-5235

VL - 20

SP - 339

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -