Erratum: P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications (Journal of Electronic Materials (2005) 34:6 (949-952))

E. James Egerton; Ashok K. Sood; Rajwinder Singh; Yash R. Puri; David C. Look; Todd Steiner

doi:10.1007/s11664-005-0249-4

Erratum: P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications (Journal of Electronic Materials (2005) 34:6 (949-952))

E. James Egerton
, Ashok K. Sood
, Rajwinder Singh
, Yash R. Puri
, David C. Look
, Todd Steiner

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	1183
Number of pages	1
Journal	Journal of Electronic Materials
Volume	34
Issue number	8
DOIs	https://doi.org/10.1007/s11664-005-0249-4
State	Published - Aug 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Doping
p-type
ZnO

Access to Document

10.1007/s11664-005-0249-4

Cite this

Erratum: P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications (Journal of Electronic Materials (2005) 34:6 (949-952)). / Egerton, E. James; Sood, Ashok K.; Singh, Rajwinder et al.
In: Journal of Electronic Materials, Vol. 34, No. 8, 08.2005, p. 1183.

Research output: Contribution to journal › Comment/debate › peer-review

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keywords = "Doping, p-type, ZnO",

author = "Egerton, \{E. James\} and Sood, \{Ashok K.\} and Rajwinder Singh and Puri, \{Yash R.\} and Look, \{David C.\} and Todd Steiner",

year = "2005",

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AU - Egerton, E. James

AU - Sood, Ashok K.

AU - Singh, Rajwinder

AU - Puri, Yash R.

AU - Look, David C.

AU - Steiner, Todd

PY - 2005/8

Y1 - 2005/8

KW - Doping

KW - p-type

KW - ZnO

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DO - 10.1007/s11664-005-0249-4

M3 - Comment/debate

AN - SCOPUS:24144492394

SN - 0361-5235

VL - 34

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JO - Journal of Electronic Materials

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Erratum: P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications (Journal of Electronic Materials (2005) 34:6 (949-952))

ASJC Scopus Subject Areas

Keywords

Access to Document

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