Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

J. Oila; J. Kivioja; V. Ranki; K. Saarinen; D. C. Look; R. J. Molnar; S. S. Park; S. K. Lee; J. Y. Han

doi:10.1063/1.1589006

Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, J. Y. Han

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	4611
Number of pages	1
Journal	Applied Physics Letters
Volume	82
Issue number	25
DOIs	https://doi.org/10.1063/1.1589006
State	Published - Jun 23 2003

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1589006

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author = "J. Oila and J. Kivioja and V. Ranki and K. Saarinen and Look, {D. C.} and Molnar, {R. J.} and Park, {S. S.} and Lee, {S. K.} and Han, {J. Y.}",

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AU - Kivioja, J.

AU - Ranki, V.

AU - Saarinen, K.

AU - Look, D. C.

AU - Molnar, R. J.

AU - Park, S. S.

AU - Lee, S. K.

AU - Han, J. Y.

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Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

ASJC Scopus Subject Areas

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