Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

J. Oila; J. Kivioja; V. Ranki; K. Saarinen; D. C. Look; R. J. Molnar; S. S. Park; S. K. Lee; J. Y. Han

doi:10.1063/1.1589006

Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

J. Oila
, J. Kivioja
, V. Ranki
, K. Saarinen
, D. C. Look
, R. J. Molnar
, S. S. Park
, S. K. Lee
, J. Y. Han

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	4611
Number of pages	1
Journal	Applied Physics Letters
Volume	82
Issue number	25
DOIs	https://doi.org/10.1063/1.1589006
State	Published - Jun 23 2003

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1589006

Cite this

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author = "J. Oila and J. Kivioja and V. Ranki and K. Saarinen and Look, \{D. C.\} and Molnar, \{R. J.\} and Park, \{S. S.\} and Lee, \{S. K.\} and Han, \{J. Y.\}",

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AU - Kivioja, J.

AU - Ranki, V.

AU - Saarinen, K.

AU - Look, D. C.

AU - Molnar, R. J.

AU - Park, S. S.

AU - Lee, S. K.

AU - Han, J. Y.

PY - 2003/6/23

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Erratum: Publisher's note; "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy" (Applied Physics Letters (2003) 82 (3433))

ASJC Scopus Subject Areas

Access to Document

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