TY - JOUR
T1 - ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy
AU - Hanson, M. P.
AU - Driscoll, D. C.
AU - Brown, E. R.
AU - Gossard, A. C.
PY - 2006/4
Y1 - 2006/4
N2 - The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.
AB - The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.
UR - https://www.scopus.com/pages/publications/33749351481
UR - https://www.scopus.com/inward/citedby.url?scp=33749351481&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33749351481
SN - 0019-493X
VL - 59
SP - 167
EP - 175
JO - Transactions of the Indian Institute of Metals
JF - Transactions of the Indian Institute of Metals
IS - 2
ER -