ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy

M. P. Hanson; D. C. Driscoll; E. R. Brown; A. C. Gossard

ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy

M. P. Hanson
, D. C. Driscoll
, E. R. Brown
, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

Abstract

The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.

Original language	English
Pages (from-to)	167-175
Number of pages	9
Journal	Transactions of the Indian Institute of Metals
Volume	59
Issue number	2
State	Published - Apr 2006
Externally published	Yes

ASJC Scopus Subject Areas

Metals and Alloys

Cite this

@article{0ab850d18c5f4bb48e98d2d1814a80b8,

title = "ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy",

abstract = "The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.",

author = "Hanson, \{M. P.\} and Driscoll, \{D. C.\} and Brown, \{E. R.\} and Gossard, \{A. C.\}",

year = "2006",

month = apr,

language = "English",

volume = "59",

pages = "167--175",

journal = "Transactions of the Indian Institute of Metals",

issn = "0019-493X",

number = "2",

}

TY - JOUR

T1 - ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy

AU - Hanson, M. P.

AU - Driscoll, D. C.

AU - Brown, E. R.

AU - Gossard, A. C.

PY - 2006/4

Y1 - 2006/4

N2 - The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.

AB - The effective use of ErSb semimetallic nanoparticles embedded within a semiconducting GaSb matrix, grown by molecular beam epitaxy, to manipulate the electronic andoptical properties of the composite material for a variety of applications is demonstrated. The resistivity, optical absorption, and photocarrier lifetimes, are all found to be greatly influenced by the size and density of the ErSb particles. The particle size and density can be controlled by growth parameters resulting in a versatile and highly tunable composite material.

UR - https://www.scopus.com/pages/publications/33749351481

UR - https://www.scopus.com/pages/publications/33749351481#tab=citedBy

M3 - Article

AN - SCOPUS:33749351481

SN - 0019-493X

VL - 59

SP - 167

EP - 175

JO - Transactions of the Indian Institute of Metals

JF - Transactions of the Indian Institute of Metals

IS - 2

ER -

ErSb/GaSb Metal/Semiconductor Nanocomposite Grown by Molecular Beam Epitaxy

Abstract

ASJC Scopus Subject Areas

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