Abstract
The optical attenuation of the ErAs:GaAs material at photon energies well below the GaAs band edge was measured. Three samples were measured at room temperature, each consisting of 30 layers of thin ErAs separated from each other by 40 nm of undoped GaAs. The resultant data were analyzed in detail.
| Original language | English |
|---|---|
| Article number | 077403 |
| Pages (from-to) | 077403/1-077403/4 |
| Journal | Physical Review Letters |
| Volume | 90 |
| Issue number | 7 |
| State | Published - Feb 21 2003 |
| Externally published | Yes |
ASJC Scopus Subject Areas
- General Physics and Astronomy