Evidence of Intrinsic Double Acceptor in GaAs

Phil Won Yu; W. C Mithel; M. G Mier; S. S Li; Weizhen Wang

doi:10.1063/1.93579

Evidence of Intrinsic Double Acceptor in GaAs

Phil Won Yu, W. C Mithel, M. G Mier, S. S Li, Weizhen Wang

Wright State University

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Abstract

Acceptors present in undoped p &hyphen;type conducting GaAs have been studied with photoluminescence, temperature&hyphen;dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p &hyphen;type conduction is due to presence of the shallow acceptor C As and the cation antisite double acceptor Ga As . The first and second ionization energies determined for Ga As are 77 and 230 meV from the valence&hyphen;band edge.

Original language	American English
Journal	Applied Physics Letters
Volume	41
DOIs	https://doi.org/10.1063/1.93579
State	Published - Jan 1 1982

Disciplines

Applied Mathematics
Applied Statistics
Mathematics
Physical Sciences and Mathematics
Statistics and Probability

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title = "Evidence of Intrinsic Double Acceptor in GaAs",

abstract = " Acceptors present in undoped p &hyphen;type conducting GaAs have been studied with photoluminescence, temperature&hyphen;dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p &hyphen;type conduction is due to presence of the shallow acceptor C As and the cation antisite double acceptor Ga As . The first and second ionization energies determined for Ga As are 77 and 230 meV from the valence&hyphen;band edge.",

author = "Yu, {Phil Won} and Mithel, {W. C} and Mier, {M. G} and Li, {S. S} and Weizhen Wang",

year = "1982",

month = jan,

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doi = "10.1063/1.93579",

language = "American English",

volume = "41",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Evidence of Intrinsic Double Acceptor in GaAs

AU - Yu, Phil Won

AU - Mithel, W. C

AU - Mier, M. G

AU - Li, S. S

AU - Wang, Weizhen

PY - 1982/1/1

Y1 - 1982/1/1

N2 - Acceptors present in undoped p &hyphen;type conducting GaAs have been studied with photoluminescence, temperature&hyphen;dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p &hyphen;type conduction is due to presence of the shallow acceptor C As and the cation antisite double acceptor Ga As . The first and second ionization energies determined for Ga As are 77 and 230 meV from the valence&hyphen;band edge.

AB - Acceptors present in undoped p &hyphen;type conducting GaAs have been studied with photoluminescence, temperature&hyphen;dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p &hyphen;type conduction is due to presence of the shallow acceptor C As and the cation antisite double acceptor Ga As . The first and second ionization energies determined for Ga As are 77 and 230 meV from the valence&hyphen;band edge.

UR - https://corescholar.libraries.wright.edu/math/28

U2 - 10.1063/1.93579

DO - 10.1063/1.93579

M3 - Article

VL - 41

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Evidence of Intrinsic Double Acceptor in GaAs

Abstract

Disciplines

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