Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Z. Q. Fang; D. C. Look; J. Jasinski; M. Benamara; Z. Liliental-Weber; R. J. Molnar

doi:10.1063/1.1338970

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Z. Q. Fang, D. C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	332-334
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.1338970
State	Published - Jan 15 2001

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1338970

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title = "Evolution of deep centers in GaN grown by hydride vapor phase epitaxy",

author = "Fang, {Z. Q.} and Look, {D. C.} and J. Jasinski and M. Benamara and Z. Liliental-Weber and Molnar, {R. J.}",

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AU - Fang, Z. Q.

AU - Look, D. C.

AU - Jasinski, J.

AU - Benamara, M.

AU - Liliental-Weber, Z.

AU - Molnar, R. J.

PY - 2001/1/15

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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