Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Z. Q. Fang; D. C. Look; J. Jasinski; M. Benamara; Z. Liliental-Weber; R. J. Molnar

doi:10.1063/1.1338970

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Z. Q. Fang
, D. C. Look
, J. Jasinski
, M. Benamara
, Z. Liliental-Weber
, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	332-334
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.1338970
State	Published - Jan 15 2001

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1338970

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title = "Evolution of deep centers in GaN grown by hydride vapor phase epitaxy",

author = "Fang, \{Z. Q.\} and Look, \{D. C.\} and J. Jasinski and M. Benamara and Z. Liliental-Weber and Molnar, \{R. J.\}",

year = "2001",

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doi = "10.1063/1.1338970",

language = "English",

volume = "78",

pages = "332--334",

journal = "Applied Physics Letters",

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T1 - Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Jasinski, J.

AU - Benamara, M.

AU - Liliental-Weber, Z.

AU - Molnar, R. J.

PY - 2001/1/15

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DO - 10.1063/1.1338970

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SN - 0003-6951

VL - 78

SP - 332

EP - 334

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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