Abstract
An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.
Original language | American English |
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Journal | Applied Physics Letters |
Volume | 107 |
DOIs | |
State | Published - Jan 1 2015 |
Disciplines
- Physical Sciences and Mathematics
- Physics