Extremely high hole concentrations in c-plane GaN

Elaissa Trybus; W. Alan Doolittle; Michael Moseley; Walter Henderson; Daniel Billingsley; Gon Namkoong; David C. Look

doi:10.1002/pssc.200880962

Extremely high hole concentrations in c-plane GaN

Elaissa Trybus, W. Alan Doolittle, Michael Moseley, Walter Henderson, Daniel Billingsley, Gon Namkoong, David C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	S788-S791
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1002/pssc.200880962
State	Published - Jul 2009

ASJC Scopus Subject Areas

Condensed Matter Physics

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10.1002/pssc.200880962

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title = "Extremely high hole concentrations in c-plane GaN",

author = "Elaissa Trybus and Doolittle, {W. Alan} and Michael Moseley and Walter Henderson and Daniel Billingsley and Gon Namkoong and Look, {David C.}",

year = "2009",

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volume = "6",

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T1 - Extremely high hole concentrations in c-plane GaN

AU - Trybus, Elaissa

AU - Doolittle, W. Alan

AU - Moseley, Michael

AU - Henderson, Walter

AU - Billingsley, Daniel

AU - Namkoong, Gon

AU - Look, David C.

PY - 2009/7

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DO - 10.1002/pssc.200880962

M3 - Article

AN - SCOPUS:67650769177

SN - 1862-6351

VL - 6

SP - S788-S791

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - SUPPL. 2

ER -

Extremely high hole concentrations in c-plane GaN

ASJC Scopus Subject Areas

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