Ferromagnetic thin films for loss reduction in on-chip transmission lines

Pedram Khalili Amiri; Behzad Rejaei; Yan Zhuang; Marina Vroubel; Joachim N. Burghartz

doi:10.1109/TMAG.2007.893708

Ferromagnetic thin films for loss reduction in on-chip transmission lines

Pedram Khalili Amiri, Behzad Rejaei, Yan Zhuang, Marina Vroubel, Joachim N. Burghartz

Research output: Contribution to journal › Article › peer-review

Abstract

Microstrip transmission lines fabricated on standard silicon wafers are shown to benefit from the incorporation of thin ferromagnetic Ni-Fe films when compared to control devices without Ni-Fe. At 1 GHz, inductance and quality factor of the microstrip lines are enhanced by factors of 6 and 3, respectively, while the characteristic impedance of a 20 μm wide line is increased by 85%. For constant characteristic impedance, a 200 nm thick Ni-Fe film reduces attenuation from 1.6 to 0.7 dB/cm at 500 MHz.

Original language	English
Pages (from-to)	2630-2632
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2007.893708
State	Published - Jun 2007
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Integrated circuit interconnections
Magnetic microwave devices
Microstrip
Planar transmission lines

Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/TMAG.2007.893708

Cite this

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title = "Ferromagnetic thin films for loss reduction in on-chip transmission lines",

abstract = "Microstrip transmission lines fabricated on standard silicon wafers are shown to benefit from the incorporation of thin ferromagnetic Ni-Fe films when compared to control devices without Ni-Fe. At 1 GHz, inductance and quality factor of the microstrip lines are enhanced by factors of 6 and 3, respectively, while the characteristic impedance of a 20 μm wide line is increased by 85%. For constant characteristic impedance, a 200 nm thick Ni-Fe film reduces attenuation from 1.6 to 0.7 dB/cm at 500 MHz.",

keywords = "Integrated circuit interconnections, Magnetic microwave devices, Microstrip, Planar transmission lines",

author = "Amiri, {Pedram Khalili} and Behzad Rejaei and Yan Zhuang and Marina Vroubel and Burghartz, {Joachim N.}",

year = "2007",

month = jun,

doi = "10.1109/TMAG.2007.893708",

language = "English",

volume = "43",

pages = "2630--2632",

journal = "IEEE Transactions on Magnetics",

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T1 - Ferromagnetic thin films for loss reduction in on-chip transmission lines

AU - Amiri, Pedram Khalili

AU - Rejaei, Behzad

AU - Zhuang, Yan

AU - Vroubel, Marina

AU - Burghartz, Joachim N.

PY - 2007/6

Y1 - 2007/6

N2 - Microstrip transmission lines fabricated on standard silicon wafers are shown to benefit from the incorporation of thin ferromagnetic Ni-Fe films when compared to control devices without Ni-Fe. At 1 GHz, inductance and quality factor of the microstrip lines are enhanced by factors of 6 and 3, respectively, while the characteristic impedance of a 20 μm wide line is increased by 85%. For constant characteristic impedance, a 200 nm thick Ni-Fe film reduces attenuation from 1.6 to 0.7 dB/cm at 500 MHz.

AB - Microstrip transmission lines fabricated on standard silicon wafers are shown to benefit from the incorporation of thin ferromagnetic Ni-Fe films when compared to control devices without Ni-Fe. At 1 GHz, inductance and quality factor of the microstrip lines are enhanced by factors of 6 and 3, respectively, while the characteristic impedance of a 20 μm wide line is increased by 85%. For constant characteristic impedance, a 200 nm thick Ni-Fe film reduces attenuation from 1.6 to 0.7 dB/cm at 500 MHz.

KW - Integrated circuit interconnections

KW - Magnetic microwave devices

KW - Microstrip

KW - Planar transmission lines

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JF - IEEE Transactions on Magnetics

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ER -

Ferromagnetic thin films for loss reduction in on-chip transmission lines

Abstract

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

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Cite this