First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S 3) detectors for passive millimeter-wave and infrared imaging

H. Kazemi; J. D. Zimmerman; E. R. Brown; A. C. Gossard; G. D. Boreman; J. B. Hacker; B. Lail; C. Middleton

doi:10.1117/12.604118

First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S ³) detectors for passive millimeter-wave and infrared imaging

H. Kazemi, J. D. Zimmerman, E. R. Brown, A. C. Gossard, G. D. Boreman, J. B. Hacker, B. Lail, C. Middleton

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Article number	11
Pages (from-to)	80-83
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5789
DOIs	https://doi.org/10.1117/12.604118
State	Published - 2005
Externally published	Yes
Event	Passive Millimeter-Wave Imaging Technology VIII - Orlando, FL, United States Duration: Mar 30 2005 → Mar 31 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Low noise operation
Millimeter-wave imaging
Responsivity
Schottky diodes
Semimetal
Zero bias detectors

Access to Document

10.1117/12.604118

Cite this

Kazemi, H., Zimmerman, J. D., Brown, E. R., Gossard, A. C., Boreman, G. D., Hacker, J. B., Lail, B., & Middleton, C. (2005). First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S ³) detectors for passive millimeter-wave and infrared imaging. Proceedings of SPIE - The International Society for Optical Engineering, 5789, 80-83. Article 11. https://doi.org/10.1117/12.604118

First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S ³) detectors for passive millimeter-wave and infrared imaging. / Kazemi, H.; Zimmerman, J. D.; Brown, E. R. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5789, 11, 2005, p. 80-83.

Research output: Contribution to journal › Conference article › peer-review

Kazemi, H, Zimmerman, JD, Brown, ER, Gossard, AC, Boreman, GD, Hacker, JB, Lail, B & Middleton, C 2005, 'First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S ³) detectors for passive millimeter-wave and infrared imaging', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5789, 11, pp. 80-83. https://doi.org/10.1117/12.604118

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keywords = "Low noise operation, Millimeter-wave imaging, Responsivity, Schottky diodes, Semimetal, Zero bias detectors",

author = "H. Kazemi and Zimmerman, {J. D.} and Brown, {E. R.} and Gossard, {A. C.} and Boreman, {G. D.} and Hacker, {J. B.} and B. Lail and C. Middleton",

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AU - Brown, E. R.

AU - Gossard, A. C.

AU - Boreman, G. D.

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