Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila; J. Kivioja; V. Ranki; K. Saarinen; D. C. Look; R. J. Molnar; S. S. Park; S. K. Lee; J. Y. Han

doi:10.1063/1.1569414

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, J. Y. Han

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3433-3435
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	20
DOIs	https://doi.org/10.1063/1.1569414
State	Published - May 19 2003

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1569414

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title = "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy",

author = "J. Oila and J. Kivioja and V. Ranki and K. Saarinen and Look, {D. C.} and Molnar, {R. J.} and Park, {S. S.} and Lee, {S. K.} and Han, {J. Y.}",

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AU - Oila, J.

AU - Kivioja, J.

AU - Ranki, V.

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AU - Look, D. C.

AU - Molnar, R. J.

AU - Park, S. S.

AU - Lee, S. K.

AU - Han, J. Y.

PY - 2003/5/19

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EP - 3435

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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