| Original language | English |
|---|---|
| Pages (from-to) | 3433-3435 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 20 |
| DOIs | |
| State | Published - May 19 2003 |
ASJC Scopus Subject Areas
- Physics and Astronomy (miscellaneous)
Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy
- J. Oila
- , J. Kivioja
- , V. Ranki
- , K. Saarinen
- , D. C. Look
- , R. J. Molnar
- , S. S. Park
- , S. K. Lee
- , J. Y. Han
Research output: Contribution to journal › Article › peer-review