Ga vacancies in electron irradiated GaN: Introduction, stability and temperature dependence of positron trapping

K. Saarinen; T. Suski; I. Grzegory; D. C. Look

doi:10.1016/S0921-4526(01)00659-7

Ga vacancies in electron irradiated GaN: Introduction, stability and temperature dependence of positron trapping

K. Saarinen, T. Suski, I. Grzegory, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00659-7
State	Published - Dec 2001

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Ga vacancy
GaN
Irradiation
Positron annihilation

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10.1016/S0921-4526(01)00659-7

Cite this

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title = "Ga vacancies in electron irradiated GaN: Introduction, stability and temperature dependence of positron trapping",

keywords = "Ga vacancy, GaN, Irradiation, Positron annihilation",

author = "K. Saarinen and T. Suski and I. Grzegory and Look, {D. C.}",

year = "2001",

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language = "English",

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journal = "Physica B: Condensed Matter",

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T1 - Ga vacancies in electron irradiated GaN

T2 - Introduction, stability and temperature dependence of positron trapping

AU - Saarinen, K.

AU - Suski, T.

AU - Grzegory, I.

AU - Look, D. C.

PY - 2001/12

Y1 - 2001/12

KW - Ga vacancy

KW - GaN

KW - Irradiation

KW - Positron annihilation

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M3 - Article

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SN - 0921-4526

VL - 308-310

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Ga vacancies in electron irradiated GaN: Introduction, stability and temperature dependence of positron trapping

ASJC Scopus Subject Areas

Keywords

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