GaAs layer grown by MBE at 200°C-300°C: Lattice parameter and resistivity

C. R. Wie; K. Xie; D. C. Look; K. R. Evans; C. E. Stutz

GaAs layer grown by MBE at 200°C-300°C: Lattice parameter and resistivity

C. R. Wie, K. Xie, D. C. Look, K. R. Evans, C. E. Stutz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Proceedings of the 6th Conference on Semi-Insulating III-V
Publisher	Publ by IEEE
Pages	71-76
Number of pages	6
ISBN (Print)	0750300663
State	Published - 1990
Externally published	Yes
Event	Proceedings of the 6th Conference on Semi-Insulating III-V Materials - Toronto, Ont, Can Duration: May 13 1990 → May 16 1990

Publication series

Name	Proceedings of the 6th Conference on Semi-Insulating III-V

Conference

Conference	Proceedings of the 6th Conference on Semi-Insulating III-V Materials
City	Toronto, Ont, Can
Period	5/13/90 → 5/16/90

ASJC Scopus Subject Areas

General Engineering

Cite this

Wie, CR, Xie, K, Look, DC, Evans, KR & Stutz, CE 1990, GaAs layer grown by MBE at 200°C-300°C: Lattice parameter and resistivity. in Proceedings of the 6th Conference on Semi-Insulating III-V. Proceedings of the 6th Conference on Semi-Insulating III-V, Publ by IEEE, pp. 71-76, Proceedings of the 6th Conference on Semi-Insulating III-V Materials, Toronto, Ont, Can, 5/13/90.

@inproceedings{4318ed93457e4401a941004aed3e49d6,

title = "GaAs layer grown by MBE at 200°C-300°C: Lattice parameter and resistivity",

author = "Wie, \{C. R.\} and K. Xie and Look, \{D. C.\} and Evans, \{K. R.\} and Stutz, \{C. E.\}",

year = "1990",

language = "English",

isbn = "0750300663",

series = "Proceedings of the 6th Conference on Semi-Insulating III-V",

publisher = "Publ by IEEE",

pages = "71--76",

booktitle = "Proceedings of the 6th Conference on Semi-Insulating III-V",

note = "Proceedings of the 6th Conference on Semi-Insulating III-V Materials ; Conference date: 13-05-1990 Through 16-05-1990",

}

TY - GEN

T1 - GaAs layer grown by MBE at 200°C-300°C

T2 - Proceedings of the 6th Conference on Semi-Insulating III-V Materials

AU - Wie, C. R.

AU - Xie, K.

AU - Look, D. C.

AU - Evans, K. R.

AU - Stutz, C. E.

PY - 1990

Y1 - 1990

UR - https://www.scopus.com/pages/publications/0025575205

UR - https://www.scopus.com/inward/citedby.url?scp=0025575205&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025575205

SN - 0750300663

T3 - Proceedings of the 6th Conference on Semi-Insulating III-V

SP - 71

EP - 76

BT - Proceedings of the 6th Conference on Semi-Insulating III-V

PB - Publ by IEEE

Y2 - 13 May 1990 through 16 May 1990

ER -

GaAs layer grown by MBE at 200°C-300°C: Lattice parameter and resistivity

Publication series

Conference

ASJC Scopus Subject Areas

Other files and links

Cite this