Gallium and nitrogen vacancies in GaN: Impurity decoration effects

S. Hautakangas; V. Ranki; I. Makkonen; M. J. Puska; K. Saarinen; L. Liszkay; D. Seghier; H. P. Gislason; J. A. Freitas; R. L. Henry; X. Xu; D. C. Look

doi:10.1016/j.physb.2005.12.109

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

S. Hautakangas, V. Ranki, I. Makkonen, M. J. Puska, K. Saarinen, L. Liszkay, D. Seghier, H. P. Gislason, J. A. Freitas, R. L. Henry, X. Xu, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	424-427
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.109
State	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Annihilation
Positron
Vacancy

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10.1016/j.physb.2005.12.109

Cite this

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title = "Gallium and nitrogen vacancies in GaN: Impurity decoration effects",

keywords = "Annihilation, Positron, Vacancy",

author = "S. Hautakangas and V. Ranki and I. Makkonen and Puska, {M. J.} and K. Saarinen and L. Liszkay and D. Seghier and Gislason, {H. P.} and Freitas, {J. A.} and Henry, {R. L.} and X. Xu and Look, {D. C.}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.109",

language = "English",

volume = "376-377",

pages = "424--427",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

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TY - JOUR

T1 - Gallium and nitrogen vacancies in GaN

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

AU - Hautakangas, S.

AU - Ranki, V.

AU - Makkonen, I.

AU - Puska, M. J.

AU - Saarinen, K.

AU - Liszkay, L.

AU - Seghier, D.

AU - Gislason, H. P.

AU - Freitas, J. A.

AU - Henry, R. L.

AU - Xu, X.

AU - Look, D. C.

PY - 2006/4/1

Y1 - 2006/4/1

KW - Annihilation

KW - Positron

KW - Vacancy

UR - http://www.scopus.com/inward/record.url?scp=33645159849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645159849&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.109

DO - 10.1016/j.physb.2005.12.109

M3 - Conference article

AN - SCOPUS:33645159849

SN - 0921-4526

VL - 376-377

SP - 424

EP - 427

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

Y2 - 24 July 2005 through 29 July 2005

ER -

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

ASJC Scopus Subject Areas

Keywords

Access to Document

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