Gallium and nitrogen vacancies in GaN: Impurity decoration effects

S. Hautakangas; V. Ranki; I. Makkonen; M. J. Puska; K. Saarinen; L. Liszkay; D. Seghier; H. P. Gislason; J. A. Freitas; R. L. Henry; X. Xu; D. C. Look

doi:10.1016/j.physb.2005.12.109

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

S. Hautakangas
, V. Ranki
, I. Makkonen
, M. J. Puska
, K. Saarinen
, L. Liszkay
, D. Seghier
, H. P. Gislason
, J. A. Freitas
, R. L. Henry
, X. Xu
, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	424-427
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.109
State	Published - Apr 1 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: Jul 24 2005 → Jul 29 2005

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Annihilation
Positron
Vacancy

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10.1016/j.physb.2005.12.109

Cite this

@article{ef630133cf03493aa29243779f5ad5e3,

title = "Gallium and nitrogen vacancies in GaN: Impurity decoration effects",

keywords = "Annihilation, Positron, Vacancy",

author = "S. Hautakangas and V. Ranki and I. Makkonen and Puska, \{M. J.\} and K. Saarinen and L. Liszkay and D. Seghier and Gislason, \{H. P.\} and Freitas, \{J. A.\} and Henry, \{R. L.\} and X. Xu and Look, \{D. C.\}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.109",

language = "English",

volume = "376-377",

pages = "424--427",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Gallium and nitrogen vacancies in GaN

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

AU - Hautakangas, S.

AU - Ranki, V.

AU - Makkonen, I.

AU - Puska, M. J.

AU - Saarinen, K.

AU - Liszkay, L.

AU - Seghier, D.

AU - Gislason, H. P.

AU - Freitas, J. A.

AU - Henry, R. L.

AU - Xu, X.

AU - Look, D. C.

PY - 2006/4/1

Y1 - 2006/4/1

KW - Annihilation

KW - Positron

KW - Vacancy

UR - https://www.scopus.com/pages/publications/33645159849

UR - https://www.scopus.com/pages/publications/33645159849#tab=citedBy

U2 - 10.1016/j.physb.2005.12.109

DO - 10.1016/j.physb.2005.12.109

M3 - Conference article

AN - SCOPUS:33645159849

SN - 0921-4526

VL - 376-377

SP - 424

EP - 427

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

Y2 - 24 July 2005 through 29 July 2005

ER -

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

ASJC Scopus Subject Areas

Keywords

Access to Document

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