Giant traps associated with extended defects in GaN and SiC

D. C. Look; Z. Q. Fang; A. Krtschil; A. Krost

doi:10.1002/pssc.200460617

Giant traps associated with extended defects in GaN and SiC

D. C. Look, Z. Q. Fang, A. Krtschil, A. Krost

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1039-1046
Number of pages	8
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200460617
State	Published - 2005

ASJC Scopus Subject Areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200460617

Cite this

@article{715dbf89b8fb43ae9ef62f38392592dc,

title = "Giant traps associated with extended defects in GaN and SiC",

author = "Look, {D. C.} and Fang, {Z. Q.} and A. Krtschil and A. Krost",

year = "2005",

doi = "10.1002/pssc.200460617",

language = "English",

volume = "2",

pages = "1039--1046",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "3",

}

TY - JOUR

T1 - Giant traps associated with extended defects in GaN and SiC

AU - Look, D. C.

AU - Fang, Z. Q.

AU - Krtschil, A.

AU - Krost, A.

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=27344444663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344444663&partnerID=8YFLogxK

U2 - 10.1002/pssc.200460617

DO - 10.1002/pssc.200460617

M3 - Article

AN - SCOPUS:27344444663

SN - 1610-1634

VL - 2

SP - 1039

EP - 1046

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

ER -

Giant traps associated with extended defects in GaN and SiC

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this