| Original language | English |
|---|---|
| Pages (from-to) | 594-596 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 80 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jul 1 1996 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy
- D. C. Reynolds
- , D. C. Look
- , W. Kim
- , Ö Aktas
- , A. Botchkarev
- , A. Salvador
- , H. Morkoç
- , D. N. Talwar
Research output: Contribution to journal › Article › peer-review