Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

D. C. Reynolds; D. C. Look; W. Kim; Ö Aktas; A. Botchkarev; A. Salvador; H. Morkoç; D. N. Talwar

doi:10.1063/1.362724

Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

D. C. Reynolds, D. C. Look, W. Kim, Ö Aktas, A. Botchkarev, A. Salvador, H. Morkoç, D. N. Talwar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	594-596
Number of pages	3
Journal	Journal of Applied Physics
Volume	80
Issue number	1
DOIs	https://doi.org/10.1063/1.362724
State	Published - Jul 1 1996

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.362724

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title = "Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy",

author = "Reynolds, \{D. C.\} and Look, \{D. C.\} and W. Kim and {\"O} Aktas and A. Botchkarev and A. Salvador and H. Morko{\c c} and Talwar, \{D. N.\}",

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doi = "10.1063/1.362724",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Kim, W.

AU - Aktas, Ö

AU - Botchkarev, A.

AU - Salvador, A.

AU - Morkoç, H.

AU - Talwar, D. N.

PY - 1996/7/1

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U2 - 10.1063/1.362724

DO - 10.1063/1.362724

M3 - Article

AN - SCOPUS:0001340851

SN - 0021-8979

VL - 80

SP - 594

EP - 596

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy

ASJC Scopus Subject Areas

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