Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

J. R. Söderström; E. R. Brown; C. D. Parker; L. J. Mahoney; J. Y. Yao; T. G. Andersson; T. C. McGill

doi:10.1063/1.104659

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

J. R. Söderström, E. R. Brown, C. D. Parker, L. J. Mahoney, J. Y. Yao, T. G. Andersson, T. C. McGill

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	275-277
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	3
DOIs	https://doi.org/10.1063/1.104659
State	Published - 1991
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.104659

Cite this

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title = "Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes",

author = "S{\"o}derstr{\"o}m, {J. R.} and Brown, {E. R.} and Parker, {C. D.} and Mahoney, {L. J.} and Yao, {J. Y.} and Andersson, {T. G.} and McGill, {T. C.}",

year = "1991",

doi = "10.1063/1.104659",

language = "English",

volume = "58",

pages = "275--277",

journal = "Applied Physics Letters",

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number = "3",

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T1 - Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

AU - Söderström, J. R.

AU - Brown, E. R.

AU - Parker, C. D.

AU - Mahoney, L. J.

AU - Yao, J. Y.

AU - Andersson, T. G.

AU - McGill, T. C.

PY - 1991

Y1 - 1991

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DO - 10.1063/1.104659

M3 - Article

AN - SCOPUS:36449006146

SN - 0003-6951

VL - 58

SP - 275

EP - 277

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

ASJC Scopus Subject Areas

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