Growth and properties of n- and p-type ZnO

C. W. Litton; D. C. Look; B. B. Claflin; D. C. Reynolds; G. Cantwell; D. B. Eason; R. D. Worley

doi:10.1109/ISCSPC.2003.1354427

Growth and properties of n- and p-type ZnO

C. W. Litton, D. C. Look, B. B. Claflin, D. C. Reynolds, G. Cantwell, D. B. Eason, R. D. Worley

Future of Semiconductors, a National Science Foundation Program

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2003 30th International Symposium on Compound Semiconductors, ISCS 2003
Subtitle of host publication	Post-Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	28-35
Number of pages	8
ISBN (Electronic)	0780386140
DOIs	https://doi.org/10.1109/ISCSPC.2003.1354427
State	Published - 2003
Event	30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-August

Conference

Conference	30th International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISCSPC.2003.1354427

Cite this

Litton, C. W., Look, D. C., Claflin, B. B., Reynolds, D. C., Cantwell, G., Eason, D. B., & Worley, R. D. (2003). Growth and properties of n- and p-type ZnO. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (pp. 28-35). Article 1354427 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354427

Growth and properties of n- and p-type ZnO. / Litton, C. W.; Look, D. C.; Claflin, B. B. et al.
2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 28-35 1354427 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Litton, CW, Look, DC, Claflin, BB, Reynolds, DC, Cantwell, G, Eason, DB & Worley, RD 2003, Growth and properties of n- and p-type ZnO. in 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings., 1354427, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-August, Institute of Electrical and Electronics Engineers Inc., pp. 28-35, 30th International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCSPC.2003.1354427

Litton CW, Look DC, Claflin BB, Reynolds DC, Cantwell G, Eason DB et al. Growth and properties of n- and p-type ZnO. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 28-35. 1354427. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCSPC.2003.1354427

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AU - Litton, C. W.

AU - Look, D. C.

AU - Claflin, B. B.

AU - Reynolds, D. C.

AU - Cantwell, G.

AU - Eason, D. B.

AU - Worley, R. D.

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BT - 2003 30th International Symposium on Compound Semiconductors, ISCS 2003

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ER -

Growth and properties of n- and p-type ZnO

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

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