Growth of thick InN by molecular beam epitaxy

Hai Lu; William J. Schaff; Lester F. Eastman; J. Wu; Wladek Walukiewicz; David C. Look; Richard J. Molnar

doi:10.1557/proc-743-l4.10

Growth of thick InN by molecular beam epitaxy

Hai Lu
, William J. Schaff
, Lester F. Eastman
, J. Wu
, Wladek Walukiewicz
, David C. Look
, Richard J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	317-322
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	743
DOIs	https://doi.org/10.1557/proc-743-l4.10
State	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-743-l4.10

Cite this

@article{caa70123c3ca4f91b9961080bc16791e,

title = "Growth of thick InN by molecular beam epitaxy",

author = "Hai Lu and Schaff, \{William J.\} and Eastman, \{Lester F.\} and J. Wu and Wladek Walukiewicz and Look, \{David C.\} and Molnar, \{Richard J.\}",

year = "2002",

doi = "10.1557/proc-743-l4.10",

language = "English",

volume = "743",

pages = "317--322",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

}

TY - JOUR

T1 - Growth of thick InN by molecular beam epitaxy

AU - Lu, Hai

AU - Schaff, William J.

AU - Eastman, Lester F.

AU - Wu, J.

AU - Walukiewicz, Wladek

AU - Look, David C.

AU - Molnar, Richard J.

PY - 2002

Y1 - 2002

UR - https://www.scopus.com/pages/publications/0038372278

UR - https://www.scopus.com/pages/publications/0038372278#tab=citedBy

U2 - 10.1557/proc-743-l4.10

DO - 10.1557/proc-743-l4.10

M3 - Conference article

AN - SCOPUS:0038372278

SN - 0272-9172

VL - 743

SP - 317

EP - 322

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

Growth of thick InN by molecular beam epitaxy

ASJC Scopus Subject Areas

Access to Document

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Cite this