| Original language | English |
|---|---|
| Pages (from-to) | 2420-2424 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 66 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1989 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
Hall-effect depletion corrections in ion-implanted samples: Si 29 in GaAs
Research output: Contribution to journal › Article › peer-review