High acceptor production rate in electron-irradiated n-type GaAs: Impact on defect models

Research output: Contribution to journal › Article › peer-review

ASJC Scopus Subject Areas

@article{9da9fc8764f248b8b3aa580c57b961f6,

title = "High acceptor production rate in electron-irradiated n-type GaAs: Impact on defect models",

author = "Look, {D. C.}",

year = "1987",

doi = "10.1063/1.98831",

language = "English",

volume = "51",

pages = "843--845",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "11",

}

TY - JOUR

T1 - High acceptor production rate in electron-irradiated n-type GaAs

T2 - Impact on defect models

AU - Look, D. C.

PY - 1987

Y1 - 1987

UR - http://www.scopus.com/inward/record.url?scp=0010753479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0010753479&partnerID=8YFLogxK

U2 - 10.1063/1.98831

DO - 10.1063/1.98831

M3 - Article

AN - SCOPUS:0010753479

SN - 0003-6951

VL - 51

SP - 843

EP - 845

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -