High electron mobility in free-standing GaN substrates

A. Saxler; D. C. Look; S. Elhamri; J. Sizelove; D. Cull; W. C. Mitchel; M. Callahan; D. Bliss; L. Bouthillette; Sheng Qi Wang; C. M. Sung; S. S. Park; K. Y. Lee

High electron mobility in free-standing GaN substrates

A. Saxler, D. C. Look, S. Elhamri, J. Sizelove, D. Cull, W. C. Mitchel, M. Callahan, D. Bliss, L. Bouthillette, Sheng Qi Wang, C. M. Sung, S. S. Park, K. Y. Lee

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	G7.2.1-G7.2.6
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Externally published	Yes
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{84dcc687d92a4248980c9ff0fbba558f,

title = "High electron mobility in free-standing GaN substrates",

author = "A. Saxler and Look, {D. C.} and S. Elhamri and J. Sizelove and D. Cull and Mitchel, {W. C.} and M. Callahan and D. Bliss and L. Bouthillette and Wang, {Sheng Qi} and Sung, {C. M.} and Park, {S. S.} and Lee, {K. Y.}",

year = "2001",

language = "English",

volume = "639",

pages = "G7.2.1--G7.2.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

}

TY - JOUR

T1 - High electron mobility in free-standing GaN substrates

AU - Saxler, A.

AU - Look, D. C.

AU - Elhamri, S.

AU - Sizelove, J.

AU - Cull, D.

AU - Mitchel, W. C.

AU - Callahan, M.

AU - Bliss, D.

AU - Bouthillette, L.

AU - Wang, Sheng Qi

AU - Sung, C. M.

AU - Park, S. S.

AU - Lee, K. Y.

PY - 2001

Y1 - 2001

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M3 - Conference article

AN - SCOPUS:0035557643

SN - 0272-9172

VL - 639

SP - G7.2.1-G7.2.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -

High electron mobility in free-standing GaN substrates

ASJC Scopus Subject Areas

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