High electron mobility in free-standing GaN substrates

A. Saxler; D. C. Look; S. Elhamri; J. Sizelove; D. Cull; W. C. Mitchel; M. Callahan; D. Bliss; L. Bouthillette; Sheng Qi Wang; C. M. Sung; S. S. Park; K. Y. Lee

High electron mobility in free-standing GaN substrates

A. Saxler
, D. C. Look
, S. Elhamri
, J. Sizelove
, D. Cull
, W. C. Mitchel
, M. Callahan
, D. Bliss
, L. Bouthillette
, Sheng Qi Wang
, C. M. Sung
, S. S. Park
, K. Y. Lee

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	G7.2.1-G7.2.6
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Externally published	Yes
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{84dcc687d92a4248980c9ff0fbba558f,

title = "High electron mobility in free-standing GaN substrates",

author = "A. Saxler and Look, \{D. C.\} and S. Elhamri and J. Sizelove and D. Cull and Mitchel, \{W. C.\} and M. Callahan and D. Bliss and L. Bouthillette and Wang, \{Sheng Qi\} and Sung, \{C. M.\} and Park, \{S. S.\} and Lee, \{K. Y.\}",

year = "2001",

language = "English",

volume = "639",

pages = "G7.2.1--G7.2.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

}

TY - JOUR

T1 - High electron mobility in free-standing GaN substrates

AU - Saxler, A.

AU - Look, D. C.

AU - Elhamri, S.

AU - Sizelove, J.

AU - Cull, D.

AU - Mitchel, W. C.

AU - Callahan, M.

AU - Bliss, D.

AU - Bouthillette, L.

AU - Wang, Sheng Qi

AU - Sung, C. M.

AU - Park, S. S.

AU - Lee, K. Y.

PY - 2001

Y1 - 2001

UR - https://www.scopus.com/pages/publications/0035557643

UR - https://www.scopus.com/pages/publications/0035557643#tab=citedBy

M3 - Conference article

AN - SCOPUS:0035557643

SN - 0272-9172

VL - 639

SP - G7.2.1-G7.2.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -

High electron mobility in free-standing GaN substrates

ASJC Scopus Subject Areas

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