High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy

L. K. Li; J. Alperin; W. I. Wang; D. C. Look; D. C. Reynolds

doi:10.1116/1.590087

High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy

L. K. Li
, J. Alperin
, W. I. Wang
, D. C. Look
, D. C. Reynolds

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1275-1277
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.590087
State	Published - 1998

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.590087

Cite this

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title = "High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy",

author = "Li, \{L. K.\} and J. Alperin and Wang, \{W. I.\} and Look, \{D. C.\} and Reynolds, \{D. C.\}",

year = "1998",

doi = "10.1116/1.590087",

language = "English",

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pages = "1275--1277",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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T1 - High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy

AU - Li, L. K.

AU - Alperin, J.

AU - Wang, W. I.

AU - Look, D. C.

AU - Reynolds, D. C.

PY - 1998

Y1 - 1998

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SN - 1071-1023

VL - 16

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EP - 1277

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy

ASJC Scopus Subject Areas

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