High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS

I. Iramnaaz; T. Sandoval; Y. Zhuang; H. Schellevis; B. Rejaei

doi:10.1109/ECTC.2011.5898508

High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS

I. Iramnaaz, T. Sandoval, Y. Zhuang, H. Schellevis, B. Rejaei

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe 20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz. © 2011 IEEE.

Original language	American English
Title of host publication	2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011
Publisher	IEEE
Pages	163-168
Number of pages	6
ISBN (Electronic)	978-1-61284-498-5, 978-1-61284-496-1
ISBN (Print)	978-1-61284-497-8
DOIs	https://doi.org/10.1109/ECTC.2011.5898508
State	Published - Jun 20 2011
Event	2011 61st Electronic Components and Technology Conference, ECTC 2011 - Lake Buena Vista, FL, United States Duration: May 31 2011 → Jun 3 2011

Conference

Conference	2011 61st Electronic Components and Technology Conference, ECTC 2011
Country/Territory	United States
City	Lake Buena Vista, FL
Period	5/31/11 → 6/3/11

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Copper
Conductors
Superlattices
Inductors
Skin effect
Permeablility
Q factor
Quality Factor
Skin Depth

Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/ECTC.2011.5898508License: Unspecified

Cite this

Iramnaaz, I, Sandoval, T, Zhuang, Y, Schellevis, H & Rejaei, B 2011, High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS. in 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011., 5898508, IEEE, pp. 163-168, 2011 61st Electronic Components and Technology Conference, ECTC 2011, Lake Buena Vista, FL, United States, 5/31/11. https://doi.org/10.1109/ECTC.2011.5898508

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title = "High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS",

abstract = " Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe 20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz. {\textcopyright} 2011 IEEE.",

keywords = "Copper, Conductors, Superlattices, Inductors, Skin effect, Permeablility, Q factor, Quality Factor, Skin Depth",

author = "I. Iramnaaz and T. Sandoval and Y. Zhuang and H. Schellevis and B. Rejaei",

year = "2011",

month = jun,

day = "20",

doi = "10.1109/ECTC.2011.5898508",

language = "American English",

isbn = "978-1-61284-497-8",

pages = "163--168",

booktitle = "2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011",

publisher = "IEEE",

note = "2011 61st Electronic Components and Technology Conference, ECTC 2011 ; Conference date: 31-05-2011 Through 03-06-2011",

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T1 - High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS

AU - Iramnaaz, I.

AU - Sandoval, T.

AU - Zhuang, Y.

AU - Schellevis, H.

AU - Rejaei, B.

PY - 2011/6/20

Y1 - 2011/6/20

N2 - Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe 20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz. © 2011 IEEE.

AB - Integrated on-chip inductors with high quality factors are demonstrated using a low loss artificial conductor technology. This concept is based on an artificial layered meta-material comprising a bi-layered Ni80Fe 20/Cu superlattice. By properly tailoring the thickness ratio between the non-magnetic and magnetic metallic layers, the skin effects can be effectively suppressed within a wide frequency range, and can be tuned to a minimum at the frequency of interest up to 67 GHz. The quality factor has been increased by 41% of a 2nH inductor at 14.5GHz. The bandwidth of skin effect suppression is obtained between 10-18 GHz. © 2011 IEEE.

KW - Copper

KW - Conductors

KW - Superlattices

KW - Inductors

KW - Skin effect

KW - Permeablility

KW - Q factor

KW - Quality Factor

KW - Skin Depth

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BT - 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011

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T2 - 2011 61st Electronic Components and Technology Conference, ECTC 2011

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ER -

High quality factor RF inductors using low loss conductor featured with skin effect suppression for standard CMOS/BiCMOS

Abstract

Conference

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

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Cite this