High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds; D. C. Look; B. Jogai; R. Kaspi; K. R. Evans; M. Estes

doi:10.1116/1.589358

High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds, D. C. Look, B. Jogai, R. Kaspi, K. R. Evans, M. Estes

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1703-1706
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	5
DOIs	https://doi.org/10.1116/1.589358
State	Published - 1997

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.589358

Cite this

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title = "High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence",

author = "Reynolds, {D. C.} and Look, {D. C.} and B. Jogai and R. Kaspi and Evans, {K. R.} and M. Estes",

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AU - Reynolds, D. C.

AU - Look, D. C.

AU - Jogai, B.

AU - Kaspi, R.

AU - Evans, K. R.

AU - Estes, M.

PY - 1997

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

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High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

ASJC Scopus Subject Areas

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