High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds; D. C. Look; B. Jogai; R. Kaspi; K. R. Evans; M. Estes

doi:10.1116/1.589358

High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds, D. C. Look, B. Jogai, R. Kaspi, K. R. Evans, M. Estes

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1703-1706
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	5
DOIs	https://doi.org/10.1116/1.589358
State	Published - 1997

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.589358

Cite this

@article{d3de5b47ff2f4e51a2e376e86042723e,

title = "High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence",

author = "Reynolds, \{D. C.\} and Look, \{D. C.\} and B. Jogai and R. Kaspi and Evans, \{K. R.\} and M. Estes",

year = "1997",

doi = "10.1116/1.589358",

language = "English",

volume = "15",

pages = "1703--1706",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "5",

}

TY - JOUR

T1 - High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Jogai, B.

AU - Kaspi, R.

AU - Evans, K. R.

AU - Estes, M.

PY - 1997

Y1 - 1997

UR - https://www.scopus.com/pages/publications/3342928647

UR - https://www.scopus.com/inward/citedby.url?scp=3342928647&partnerID=8YFLogxK

U2 - 10.1116/1.589358

DO - 10.1116/1.589358

M3 - Article

AN - SCOPUS:3342928647

SN - 1071-1023

VL - 15

SP - 1703

EP - 1706

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this