High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds; D. C. Look; B. Jogai; R. Kaspi; K. R. Evans; M. Estes

doi:10.1116/1.589358

High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds
, D. C. Look
, B. Jogai
, R. Kaspi
, K. R. Evans
, M. Estes

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1703-1706
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	5
DOIs	https://doi.org/10.1116/1.589358
State	Published - 1997

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.589358

Cite this

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title = "High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence",

author = "Reynolds, \{D. C.\} and Look, \{D. C.\} and B. Jogai and R. Kaspi and Evans, \{K. R.\} and M. Estes",

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volume = "15",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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T1 - High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Jogai, B.

AU - Kaspi, R.

AU - Evans, K. R.

AU - Estes, M.

PY - 1997

Y1 - 1997

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SN - 1071-1023

VL - 15

SP - 1703

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescence

ASJC Scopus Subject Areas

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