High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy

Y. He; J. Ramdani; N. A. El-Masry; D. C. Look; S. M. Bedair

doi:10.1007/BF02650003

High resistivity LT-In_0.47Ga_0.53P grown by gas source molecular beam epitaxy

Y. He, J. Ramdani, N. A. El-Masry, D. C. Look, S. M. Bedair

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1481-1485
Number of pages	5
Journal	Journal of Electronic Materials
Volume	22
Issue number	12
DOIs	https://doi.org/10.1007/BF02650003
State	Published - Dec 1993

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Double-crystal x-ray diffraction (DCXRD)
gas source molecular beam epitaxy (GSMBE)
high resistivity LT-InGaP

Access to Document

10.1007/BF02650003

Cite this

@article{24846300f18e45b4bfaf4d0eea399654,

title = "High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy",

keywords = "Double-crystal x-ray diffraction (DCXRD), gas source molecular beam epitaxy (GSMBE), high resistivity LT-InGaP",

author = "Y. He and J. Ramdani and El-Masry, {N. A.} and Look, {D. C.} and Bedair, {S. M.}",

year = "1993",

month = dec,

doi = "10.1007/BF02650003",

language = "English",

volume = "22",

pages = "1481--1485",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "12",

}

TY - JOUR

T1 - High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy

AU - He, Y.

AU - Ramdani, J.

AU - El-Masry, N. A.

AU - Look, D. C.

AU - Bedair, S. M.

PY - 1993/12

Y1 - 1993/12

KW - Double-crystal x-ray diffraction (DCXRD)

KW - gas source molecular beam epitaxy (GSMBE)

KW - high resistivity LT-InGaP

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U2 - 10.1007/BF02650003

DO - 10.1007/BF02650003

M3 - Article

AN - SCOPUS:0027831394

SN - 0361-5235

VL - 22

SP - 1481

EP - 1485

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -