High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

E. R. Brown; C. D. Parker; A. R. Calawa; M. J. Manfra; T. C.L.G. Sollner; C. L. Chen; S. W. Pang; K. M. Molvar

doi:10.1117/12.20913

High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system

E. R. Brown, C. D. Parker, A. R. Calawa, M. J. Manfra, T. C.L.G. Sollner, C. L. Chen, S. W. Pang, K. M. Molvar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	122-135
Number of pages	14
ISBN (Print)	0819403393, 9780819403391
DOIs	https://doi.org/10.1117/12.20913
State	Published - 1990
Externally published	Yes
Event	High-Speed Electronics and Device Scaling - San Diego, CA, USA Duration: Mar 18 1990 → Mar 19 1990

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1288
ISSN (Print)	0277-786X

Conference

Conference	High-Speed Electronics and Device Scaling
City	San Diego, CA, USA
Period	3/18/90 → 3/19/90

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.20913

Cite this

Brown, E. R., Parker, C. D., Calawa, A. R., Manfra, M. J., Sollner, T. C. L. G., Chen, C. L., Pang, S. W., & Molvar, K. M. (1990). High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 122-135). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1288). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.20913

High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. / Brown, E. R.; Parker, C. D.; Calawa, A. R. et al.
Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1990. p. 122-135 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1288).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Brown, ER, Parker, CD, Calawa, AR, Manfra, MJ, Sollner, TCLG, Chen, CL, Pang, SW & Molvar, KM 1990, High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1288, Publ by Int Soc for Optical Engineering, pp. 122-135, High-Speed Electronics and Device Scaling, San Diego, CA, USA, 3/18/90. https://doi.org/10.1117/12.20913

Brown ER, Parker CD, Calawa AR, Manfra MJ, Sollner TCLG, Chen CL et al. High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. In Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1990. p. 122-135. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.20913

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author = "Brown, {E. R.} and Parker, {C. D.} and Calawa, {A. R.} and Manfra, {M. J.} and Sollner, {T. C.L.G.} and Chen, {C. L.} and Pang, {S. W.} and Molvar, {K. M.}",

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