High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

  • E. R. Brown
  • , C. D. Parker
  • , A. R. Calawa
  • , M. J. Manfra
  • , T. C.L.G. Sollner
  • , C. L. Chen
  • , S. W. Pang
  • , K. M. Molvar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages122-135
Number of pages14
ISBN (Print)0819403393, 9780819403391
DOIs
StatePublished - 1990
Externally publishedYes
EventHigh-Speed Electronics and Device Scaling - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1288
ISSN (Print)0277-786X

Conference

ConferenceHigh-Speed Electronics and Device Scaling
CitySan Diego, CA, USA
Period3/18/903/19/90

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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