High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy

Z. Q. Fang; B. B. Claflin; D. C. Look; T. H. Myers; D. D. Koleske; A. E. Wickenden; R. L. Henry

doi:10.1557/proc-743-l11.33

High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy

Z. Q. Fang, B. B. Claflin, D. C. Look, T. H. Myers, D. D. Koleske, A. E. Wickenden, R. L. Henry

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	749-754
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	743
DOIs	https://doi.org/10.1557/proc-743-l11.33
State	Published - 2002
Event	Gan and Related Alloys - 2002 - Boston, MA, United States Duration: Dec 2 2002 → Dec 6 2002

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-743-l11.33

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@article{bc9d50bd31cd4867919447c245df603d,

title = "High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy",

author = "Fang, {Z. Q.} and Claflin, {B. B.} and Look, {D. C.} and Myers, {T. H.} and Koleske, {D. D.} and Wickenden, {A. E.} and Henry, {R. L.}",

year = "2002",

doi = "10.1557/proc-743-l11.33",

language = "English",

volume = "743",

pages = "749--754",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Gan and Related Alloys - 2002 ; Conference date: 02-12-2002 Through 06-12-2002",

}

TY - JOUR

T1 - High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy

AU - Fang, Z. Q.

AU - Claflin, B. B.

AU - Look, D. C.

AU - Myers, T. H.

AU - Koleske, D. D.

AU - Wickenden, A. E.

AU - Henry, R. L.

PY - 2002

Y1 - 2002

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U2 - 10.1557/proc-743-l11.33

DO - 10.1557/proc-743-l11.33

M3 - Conference article

AN - SCOPUS:0038372160

SN - 0272-9172

VL - 743

SP - 749

EP - 754

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Gan and Related Alloys - 2002

Y2 - 2 December 2002 through 6 December 2002

ER -

High-temperature illumination-induced metastability in undoped semi-insulating GaN grown by metalorganic vapor phase epitaxy

ASJC Scopus Subject Areas

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