Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Kevin D. Leedy, Kelson D. Chabak, Vladimir Vasilyev, David C. Look, John J. Boeckl, Jeff L. Brown, Stephen E. Tetlak, Andrew J. Green, Neil A. Moser, Antonio Crespo, Darren B. Thomson, Robert C. Fitch, Jonathan P. McCandless, Gregg H. Jessen

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number012103
JournalApplied Physics Letters
Volume111
Issue number1
DOIs
StatePublished - Jul 3 2017

ASJC Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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