Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Kevin D. Leedy; Kelson D. Chabak; Vladimir Vasilyev; David C. Look; John J. Boeckl; Jeff L. Brown; Stephen E. Tetlak; Andrew J. Green; Neil A. Moser; Antonio Crespo; Darren B. Thomson; Robert C. Fitch; Jonathan P. McCandless; Gregg H. Jessen

doi:10.1063/1.4991363

Highly conductive homoepitaxial Si-doped Ga₂O₃ films on (010) _β-Ga₂O₃ by pulsed laser deposition

Kevin D. Leedy
, Kelson D. Chabak
, Vladimir Vasilyev
, David C. Look
, John J. Boeckl
, Jeff L. Brown
, Stephen E. Tetlak
, Andrew J. Green
, Neil A. Moser
, Antonio Crespo
, Darren B. Thomson
, Robert C. Fitch
, Jonathan P. McCandless
, Gregg H. Jessen

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	012103
Journal	Applied Physics Letters
Volume	111
Issue number	1
DOIs	https://doi.org/10.1063/1.4991363
State	Published - Jul 3 2017

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4991363

Cite this

Leedy, K. D., Chabak, K. D., Vasilyev, V., Look, D. C., Boeckl, J. J., Brown, J. L., Tetlak, S. E., Green, A. J., Moser, N. A., Crespo, A., Thomson, D. B., Fitch, R. C., McCandless, J. P., & Jessen, G. H. (2017). Highly conductive homoepitaxial Si-doped Ga₂O₃ films on (010) _β-Ga₂O₃ by pulsed laser deposition. Applied Physics Letters, 111(1), Article 012103. https://doi.org/10.1063/1.4991363

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title = "Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition",

author = "Leedy, \{Kevin D.\} and Chabak, \{Kelson D.\} and Vladimir Vasilyev and Look, \{David C.\} and Boeckl, \{John J.\} and Brown, \{Jeff L.\} and Tetlak, \{Stephen E.\} and Green, \{Andrew J.\} and Moser, \{Neil A.\} and Antonio Crespo and Thomson, \{Darren B.\} and Fitch, \{Robert C.\} and McCandless, \{Jonathan P.\} and Jessen, \{Gregg H.\}",

year = "2017",

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doi = "10.1063/1.4991363",

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T1 - Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

AU - Leedy, Kevin D.

AU - Chabak, Kelson D.

AU - Vasilyev, Vladimir

AU - Look, David C.

AU - Boeckl, John J.

AU - Brown, Jeff L.

AU - Tetlak, Stephen E.

AU - Green, Andrew J.

AU - Moser, Neil A.

AU - Crespo, Antonio

AU - Thomson, Darren B.

AU - Fitch, Robert C.

AU - McCandless, Jonathan P.

AU - Jessen, Gregg H.

PY - 2017/7/3

Y1 - 2017/7/3

UR - https://www.scopus.com/pages/publications/85031711750

UR - https://www.scopus.com/pages/publications/85031711750#tab=citedBy

U2 - 10.1063/1.4991363

DO - 10.1063/1.4991363

M3 - Article

AN - SCOPUS:85031711750

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012103

ER -

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

ASJC Scopus Subject Areas

Access to Document

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Highly conductive homoepitaxial Si-doped Ga₂O₃ films on (010) _β-Ga₂O₃ by pulsed laser deposition