Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Tyler A. Growden; David F. Storm; Weidong Zhang; Elliott R. Brown; David J. Meyer; Parastou Fakhimi; Paul R. Berger

doi:10.1063/1.4961442

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Tyler A. Growden, David F. Storm, Weidong Zhang, Elliott R. Brown, David J. Meyer, Parastou Fakhimi, Paul R. Berger

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	083504
Journal	Applied Physics Letters
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.4961442
State	Published - Aug 22 2016
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4961442

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@article{9b481dc24e5b4f2da4167d46bf783226,

title = "Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy",

author = "Growden, {Tyler A.} and Storm, {David F.} and Weidong Zhang and Brown, {Elliott R.} and Meyer, {David J.} and Parastou Fakhimi and Berger, {Paul R.}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = aug,

day = "22",

doi = "10.1063/1.4961442",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "8",

}

TY - JOUR

T1 - Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

AU - Growden, Tyler A.

AU - Storm, David F.

AU - Zhang, Weidong

AU - Brown, Elliott R.

AU - Meyer, David J.

AU - Fakhimi, Parastou

AU - Berger, Paul R.

PY - 2016/8/22

Y1 - 2016/8/22

UR - http://www.scopus.com/inward/record.url?scp=84984691841&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84984691841&partnerID=8YFLogxK

U2 - 10.1063/1.4961442

DO - 10.1063/1.4961442

M3 - Article

AN - SCOPUS:84984691841

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083504

ER -

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

ASJC Scopus Subject Areas

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