Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Tyler A. Growden; David F. Storm; Weidong Zhang; Elliott R. Brown; David J. Meyer; Parastou Fakhimi; Paul R. Berger

doi:10.1063/1.4961442

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Tyler A. Growden
, David F. Storm
, Weidong Zhang
, Elliott R. Brown
, David J. Meyer
, Parastou Fakhimi
, Paul R. Berger

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	083504
Journal	Applied Physics Letters
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.4961442
State	Published - Aug 22 2016
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4961442

Cite this

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title = "Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy",

author = "Growden, \{Tyler A.\} and Storm, \{David F.\} and Weidong Zhang and Brown, \{Elliott R.\} and Meyer, \{David J.\} and Parastou Fakhimi and Berger, \{Paul R.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = aug,

day = "22",

doi = "10.1063/1.4961442",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

AU - Growden, Tyler A.

AU - Storm, David F.

AU - Zhang, Weidong

AU - Brown, Elliott R.

AU - Meyer, David J.

AU - Fakhimi, Parastou

AU - Berger, Paul R.

PY - 2016/8/22

Y1 - 2016/8/22

UR - https://www.scopus.com/pages/publications/84984691841

UR - https://www.scopus.com/pages/publications/84984691841#tab=citedBy

U2 - 10.1063/1.4961442

DO - 10.1063/1.4961442

M3 - Article

AN - SCOPUS:84984691841

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083504

ER -

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

ASJC Scopus Subject Areas

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