Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1

Hyung Min Jeon; Kevin D. Leedy; David C. Look; Celesta S. Chang; David A. Muller; Stefan Badescu; Vladimir Vasilyev; Jeff L. Brown; Andrew J. Green; Kelson D. Chabak

doi:10.1063/5.0062056

Homoepitaxial β-Ga₂O₃ transparent conducting oxide with conductivity σ = 2323 S cm⁻¹

Hyung Min Jeon, Kevin D. Leedy, David C. Look, Celesta S. Chang, David A. Muller, Stefan Badescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	101105
Journal	APL Materials
Volume	9
Issue number	10
DOIs	https://doi.org/10.1063/5.0062056
State	Published - Oct 1 2021

ASJC Scopus Subject Areas

General Materials Science
General Engineering

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10.1063/5.0062056

Cite this

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title = "Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1",

author = "Jeon, {Hyung Min} and Leedy, {Kevin D.} and Look, {David C.} and Chang, {Celesta S.} and Muller, {David A.} and Stefan Badescu and Vladimir Vasilyev and Brown, {Jeff L.} and Green, {Andrew J.} and Chabak, {Kelson D.}",

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doi = "10.1063/5.0062056",

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T1 - Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1

AU - Jeon, Hyung Min

AU - Leedy, Kevin D.

AU - Look, David C.

AU - Chang, Celesta S.

AU - Muller, David A.

AU - Badescu, Stefan

AU - Vasilyev, Vladimir

AU - Brown, Jeff L.

AU - Green, Andrew J.

AU - Chabak, Kelson D.

PY - 2021/10/1

Y1 - 2021/10/1

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U2 - 10.1063/5.0062056

DO - 10.1063/5.0062056

M3 - Article

AN - SCOPUS:85117069831

SN - 2166-532X

VL - 9

JO - APL Materials

JF - APL Materials

IS - 10

M1 - 101105

ER -

Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1

ASJC Scopus Subject Areas

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Homoepitaxial β-Ga₂O₃ transparent conducting oxide with conductivity σ = 2323 S cm⁻¹