Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures

Z. Q. Fang; D. C. Look

doi:10.1007/BF02649992

Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1429-1432
Number of pages	4
Journal	Journal of Electronic Materials
Volume	22
Issue number	12
DOIs	https://doi.org/10.1007/BF02649992
State	Published - Dec 1993

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Defects
hopping conduction
low-temperature-grown GaAs
photoquenching

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10.1007/BF02649992

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title = "Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures",

keywords = "Defects, hopping conduction, low-temperature-grown GaAs, photoquenching",

author = "Fang, {Z. Q.} and Look, {D. C.}",

year = "1993",

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volume = "22",

pages = "1429--1432",

journal = "Journal of Electronic Materials",

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T1 - Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures

AU - Fang, Z. Q.

AU - Look, D. C.

PY - 1993/12

Y1 - 1993/12

KW - Defects

KW - hopping conduction

KW - low-temperature-grown GaAs

KW - photoquenching

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures

ASJC Scopus Subject Areas

Keywords

Access to Document

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