Identification of donors, acceptors, and traps in bulk-like HVPE GaN

D. C. Look; Z. Q. Fang; B. Claflin

doi:10.1016/j.jcrysgro.2005.03.035

Identification of donors, acceptors, and traps in bulk-like HVPE GaN

D. C. Look, Z. Q. Fang, B. Claflin

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	143-150
Number of pages	8
Journal	Journal of Crystal Growth
Volume	281
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.03.035
State	Published - Jul 15 2005
Event	The Internbational Workshop on Bulk Nitride Semiconductors III - Duration: Sep 4 2004 → Sep 9 2004

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Defects
A1. Impurities
A1. Line defects
A3. Hydride vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2005.03.035

Cite this

@article{df038ac61f2b4bbd89cedb5db686331c,

title = "Identification of donors, acceptors, and traps in bulk-like HVPE GaN",

keywords = "A1. Defects, A1. Impurities, A1. Line defects, A3. Hydride vapor phase epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Look, {D. C.} and Fang, {Z. Q.} and B. Claflin",

year = "2005",

month = jul,

day = "15",

doi = "10.1016/j.jcrysgro.2005.03.035",

language = "English",

volume = "281",

pages = "143--150",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1",

note = "The Internbational Workshop on Bulk Nitride Semiconductors III ; Conference date: 04-09-2004 Through 09-09-2004",

}

TY - JOUR

T1 - Identification of donors, acceptors, and traps in bulk-like HVPE GaN

AU - Look, D. C.

AU - Fang, Z. Q.

AU - Claflin, B.

PY - 2005/7/15

Y1 - 2005/7/15

KW - A1. Defects

KW - A1. Impurities

KW - A1. Line defects

KW - A3. Hydride vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=20744449531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20744449531&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.03.035

DO - 10.1016/j.jcrysgro.2005.03.035

M3 - Conference article

AN - SCOPUS:20744449531

SN - 0022-0248

VL - 281

SP - 143

EP - 150

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - The Internbational Workshop on Bulk Nitride Semiconductors III

Y2 - 4 September 2004 through 9 September 2004

ER -

Identification of donors, acceptors, and traps in bulk-like HVPE GaN

ASJC Scopus Subject Areas

Keywords

Access to Document

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