Identification of the 0.15 eV donor defect in bulk GaAs

Z. Q. Fang; J. W. Hemsky; D. C. Look

doi:10.1557/PROC-325-431

Identification of the 0.15 eV donor defect in bulk GaAs

Research output: Contribution to journal › Conference article › peer-review

Abstract

The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

Original language	English
Pages (from-to)	431-436
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	325
DOIs	https://doi.org/10.1557/PROC-325-431
State	Published - Dec 1 1993
Event	1993 Materials Research Society Symposium: Symposium L — Physics and Applications of Defects in Advanced Semiconductors - Boston, MA, USA Duration: Nov 29 1993 → Dec 1 1993 https://link.springer.com/journal/43582/volumes-and-issues/325-1 (Link to publication)

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Disciplines

Materials Science and Engineering

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10.1557/PROC-325-431

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title = "Identification of the 0.15 eV donor defect in bulk GaAs",

abstract = "The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.",

author = "Fang, {Z. Q.} and Hemsky, {J. W.} and Look, {D. C.}",

year = "1993",

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doi = "10.1557/PROC-325-431",

language = "English",

volume = "325",

pages = "431--436",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

note = "1993 Materials Research Society Symposium ; Conference date: 29-11-1993 Through 01-12-1993",

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TY - JOUR

T1 - Identification of the 0.15 eV donor defect in bulk GaAs

AU - Fang, Z. Q.

AU - Hemsky, J. W.

AU - Look, D. C.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

AB - The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

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DO - 10.1557/PROC-325-431

M3 - Conference article

AN - SCOPUS:0028203216

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VL - 325

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EP - 436

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - 1993 Materials Research Society Symposium

Y2 - 29 November 1993 through 1 December 1993

ER -

Identification of the 0.15 eV donor defect in bulk GaAs

Abstract

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