Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers

Geoffrey M. Foster; Hantian Gao; Grace Mackessy; Alana M. Hyland; Martin W. Allen; Buguo Wang; David C. Look; Leonard J. Brillson

doi:10.1063/1.4989539

Impact of defect distribution on IrO_x/ZnO interface doping and Schottky barriers

Geoffrey M. Foster, Hantian Gao, Grace Mackessy, Alana M. Hyland, Martin W. Allen, Buguo Wang, David C. Look, Leonard J. Brillson

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	101604
Journal	Applied Physics Letters
Volume	111
Issue number	10
DOIs	https://doi.org/10.1063/1.4989539
State	Published - Sep 4 2017

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4989539

Cite this

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title = "Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers",

author = "Foster, {Geoffrey M.} and Hantian Gao and Grace Mackessy and Hyland, {Alana M.} and Allen, {Martin W.} and Buguo Wang and Look, {David C.} and Brillson, {Leonard J.}",

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T1 - Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers

AU - Foster, Geoffrey M.

AU - Gao, Hantian

AU - Mackessy, Grace

AU - Hyland, Alana M.

AU - Allen, Martin W.

AU - Wang, Buguo

AU - Look, David C.

AU - Brillson, Leonard J.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101604

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Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers

ASJC Scopus Subject Areas

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Impact of defect distribution on IrO_x/ZnO interface doping and Schottky barriers